| PART |
Description |
Maker |
| MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| STK4172 STK4172II |
AF Power Amplifier (Split Power Supply) (40W 40W min, THD = 0.4%)
|
SANYO[Sanyo Semicon Device]
|
| SY58013U07 |
6GHz, 1:2 FANOUT BUFFER/TRANSLATOR w/400mV LVPECL OUTPUTS and INTERNAL INPUT TERMINATION 6GHz:2扇出缓冲翻译w/400mV LVPECL输出和内部输入终
|
Micrel Semiconductor, Inc.
|
| LX5506B LX5506BLQ |
InGaP HBT 4 6GHz Power Amplifier
From old datasheet system
InGaP HBT 4 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| TIP49 TIP50 TIP47 TIP48 |
POWER TRANSISTORS(1.0A250-400V40W)
POWER TRANSISTORS(1.0A/250-400V/40W)
POWER TRANSISTORS(1.0A,250-400V,40W) 功率晶体管（安培,250 -00V，功0W
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
|
| CHF2525CNT500LW CHF2525CNT500LX |
RESISTOR, 50 OHM 40W DC-9GHZ; Series:CHF2525; Resistance:50R; Tolerance, resistance: /-5%; Power rating:40W; Resistor element type:Thick Film; Case style:2525; Length / Height, external:6.35mm; Tolerance, :5%; Tolerance, -:5%; RoHS Compliant: Yes
9 GHz 40 W Termination Chip
|
BOURNS INC
Bourns Electronic Solutions
|
| EIM8911-5 |
8.95-10.6GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
http://
|
| LX5503-LQ LX5503 |
InGaP HBT 5-6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| LX5503ELQ LX5503E |
InGaP HBT 4 - 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| TA020-060-24-21 |
2 ~ 6GHz 24dB Gain 21dBm Power Amplifier
|
Transcom, Inc.
|
